Interacting Systems for Self-Correcting Low Power Switching

In this paper we first show that dynamic switching schemes can be used to reduce energy dissipation below the thermodynamic minimum of NkTlnr (N= number of state variables, 1/r=error probability), but only at the expense of the error immunity inherent in thermodynamic processes for which the final state is insensitive to the switching dynamics. It is further shown that, for a system which has internal feedback, e.g. nanomagnets, such that all N spins act in concert, it should be possible to switch with an energy dissipation of the order of kTlnr (considerably less than the thermodynamic limit of NkTlnr), while retaining an error immunity comparable to thermodynamic switching

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5nm and 10nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.Comment: 26 pages, 8 figure